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1

[IEEE 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach, CA, USA (2016.3.20-2016.3.24)] 2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - 865 MHz switching-speed step-down DC-DC power converter for envelope tracking

Mehrotra, Vivek, Arias, Andrea, Bergman, Joshua, Neft, Charles, Urteaga, Miguel, Brar, Berinder

Year:

2016

Language:

english

File:

PDF, 1.83 MB

english, 2016

2

[IEEE 2010 IEEE International Vacuum Electronics Conference (IVEC) - Monterey, CA, USA (2010.05.18-2010.05.20)] 2010 IEEE International Vacuum Electronics Conference (IVEC) - 1.3: 220 GHz 50 W sheet beam travelling wave tube amplifier

Field, Mark, Borwick, Robert, Mehrotra, Vivek, Brar, Berinder, Zhao, Jinfeng, Shin, Young-Min, Gamzina, Diana, Spear, Alexander, Baig, Anisullah, Barnett, Larry, Luhmann, Neville, Kimura, Takuji, Atki

Year:

2010

Language:

english

File:

PDF, 792 KB

english, 2010

3

[IEEE 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011 - Baltimore, MD, USA (2011.06.5-2011.06.10)] 2011 IEEE MTT-S International Microwave Symposium - Wideband Low-Noise-Amplifier (LNA) with Lg = 50 nm InGaAs pHEMT and wideband RF chokes

Chen, Peter S., Kim, Dae-Hyun, Bergman, Joshua, Hacker, Jonathan, Brar, Berinder

Year:

2011

Language:

english

File:

PDF, 993 KB

english, 2011

4

[IEEE 2014 IEEE International Vacuum Electronics Conference (IVEC) - Monterey, CA, USA (2014.4.22-2014.4.24)] IEEE International Vacuum Electronics Conference - Development of a 220 GHz 50 W sheet beam travelling wave tube amplifier

Field, Mark, Griffith, Zachary, Young, Adam, Hillman, Christopher, Brar, Berinder, Gamzina, Diana, Barchfield, Robert, Zhao, Jinfeng, Spear, Alexander, Baig, Anisullah, Domier, Calvin, Barnett, Larry,

Year:

2014

Language:

english

File:

PDF, 376 KB

english, 2014

5

“Quasi-direct” narrow GaSb-AlSb (100) quantum wells

Berinder Brar, Herbert Kroemer, John English

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 211 KB

english, 1993

6

Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface

Toshiki Makimoto, Berinder Brar, Herbert Kroemer

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 349 KB

english, 1995

7

[IEEE 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Matsue, Japan (2007.05.14-2007.05.18)] 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate

Shinohara, Keisuke, Ha, Wonill, Rodwell, Mark J.W., Brar, Berinder

Year:

2007

Language:

english

File:

PDF, 1.14 MB

english, 2007

8

[IEEE 2010 IEEE International Vacuum Electronics Conference (IVEC) - Monterey, CA, USA (2010.05.18-2010.05.20)] 2010 IEEE International Vacuum Electronics Conference (IVEC) - 8.3: A high aspect ratio, high current density sheet beam electron gun

Atkinson, John E., Gajaria, Deepika D., Grant, Thomas J., Kimura, Takuji, Stockwell, Bradford C., Field, Mark, Borwick, Robert J., Brar, Berinder, Pasour, John A.

Year:

2010

Language:

english

File:

PDF, 408 KB

english, 2010

9

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - 50-nm E-mode In0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax > 1 THz

Kim, Dae-Hyun, del Alamo, Jesus A., Chen, Peter, Wonill Ha,, Urteaga, Miguel, Brar, Berinder

Year:

2010

Language:

english

File:

PDF, 417 KB

english, 2010

10

[IEEE 2011 36th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2011) - Houston, TX, USA (2011.10.2-2011.10.7)] 2011 International Conference on Infrared, Millimeter, and Terahertz Waves - Development of a 220 GHz, 50 W sheet-beam traveling wave tube

Kimura, Takuji, Atkinson, John, Brar, Berinder, Borwick, Robert, Chen, Carol, Field, Mark, Grant, Thomas, Hunter, Tom

Year:

2011

Language:

english

File:

PDF, 259 KB

english, 2011

11

[IEEE 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - La Jolla, CA, USA (2012.10.14-2012.10.17)] 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - Device Scale Heat Removal for High Power Density GaN Devices

Bhunia, Avijit, Brackley, Andrew, Nguyen, Chanh, Brar, Berinder

Year:

2012

Language:

english

File:

PDF, 302 KB

english, 2012

12

[IEEE 2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA (2006.06.11-2006.06.16)] 2006 IEEE MTT-S International Microwave Symposium Digest - Ultra-High-Speed Low-Noise InP-HEMT Technology

Shinohara, Keisuke, Chen, Peter, Bergman, Joshua, Kazemi, Hooman, Brar, Berinder, Watanabe, Issei, Matsui, Toshiaki, Yamashita, Yoshimi, Endoh, Akira, Hikosaka, Kohki, Mimura, Takashi, Hiyamizu, Satos

Year:

2006

Language:

english

File:

PDF, 4.13 MB

english, 2006

13

[IEEE 2006 IEEE Radiation Effects Data Workshop - Ponte Vedra Beach, FL, USA (2006.07.17-2006.07.21)] 2006 IEEE Radiation Effects Data Workshop - Proton Tolerance of InAs Based HEMT and DHBT Devices

Currie, Steven, Harff, Nathan, Pittelkow, Robert, Marshall, Paul, Bergman, Joshua, Brar, Berinder, Hacker, Jonathan, Gutierrez, Augusto, Monier, Cedric, Gilbert, Barry, Daniel, Erik

Year:

2006

Language:

english

File:

PDF, 5.31 MB

english, 2006

14

[IEEE 2007 65th Annual Device Research Conference - South Bend, IN, USA (2007.06.18-2007.06.20)] 2007 65th Annual Device Research Conference - Electric-Field Dependence of Junction Temperature in GaN HEMTs

Mehrotra, Vivek, Boutros, Karim, Brar, Berinder

Year:

2007

Language:

english

File:

PDF, 599 KB

english, 2007

15

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm

Kim, Dae-Hyun, Brar, Berinder, del Alamo, Jesus A.

Year:

2011

Language:

english

File:

PDF, 770 KB

english, 2011

16

Le Coq d'Or

Brar, Berinder, Ibbetson, James, Kroemer, Herbert, English, John H.

Journal:

Review of Scientific Instruments

Year:

1942

Language:

english

File:

PDF, 425 KB

english, 1942

17

Effects of the interface bonding type on the optical and structural properties of InAs-AlSb quantum wells

Brar, Berinder, Ibbetson, James, Kroemer, Herbert, English, John H.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 666 KB

english, 1994

18

Photoluminescence from narrow InAs-AlSb quantum wells

Brar, Berinder, Kroemer, Herbert, Ibbetson, James, English, John H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 571 KB

english, 1993

19

Growth and characterization of serpentine superlattices in the GaSb-AlSb system

Wong, K. C., Krishnamurthy, Mohan, Brar, Berinder, Yi, Jong Chang, Kroemer, Herbert, English, John H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 667 KB

english, 1993

20

Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices

Samoska, L. A., Brar, Berinder, Kroemer, H.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 657 KB

english, 1993

21

Surface donor contribution to electron sheet concentrations in not-intentionally doped InAs-AlSb quantum wells

Nguyen, Chanh, Brar, Berinder, Kroemer, Herbert, English, John H.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 520 KB

english, 1992

22

Spiral growth of GaSb on (001) GaAs using molecular beam epitaxy

Brar, Berinder, Leonard, Devin

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 410 KB

english, 1995

23

Hole transport across the (Al,Ga)(As,Sb) barrier in InAs–(Al,Ga)(As,Sb) heterostructures

Brar, Berinder, Kroemer, Herbert

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 377 KB

english, 1998

24

Electrical and optical properties of heavily n-doped GaSb–AlSb multiquantum well structures for infrared photodetector applications

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

1994

Language:

english

File:

PDF, 565 KB

english, 1994

25

[IEEE 2012 IEEE Thirteenth International Vacuum Electronics Conference (IVEC) - Monterey, CA, USA (2012.04.24-2012.04.26)] IVEC 2012 - Design and fabrication of components for a 220 GHz 50 W sheet beam travelling wave tube amplifier

Kimura, Takuji, Atkinson, John, Forrest, Scott, Grant, Thomas, Hunter, Tom, Field, Mark, Borwick, Robert, Brar, Berinder

Year:

2012

Language:

english

File:

PDF, 722 KB

english, 2012

26

Direct Growth of III-V Devices on Silicon

Herrick, Katherine, Kazior, Thomas, Liu, Amy, Loubychev, Dmitri I., Fastenau, Joel M., Urteaga, Miguel, Fitzgerald, Eugene A., Bulsara, Mayank T., Clark, David, Brar, Berinder, Ha, Wonill, Bergman, Jo

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 750 KB

english, 2008

27

SPIE Proceedings [SPIE OE/LASE '90, 14-19 Jan., Los Angeles, CA - Los Angeles, CA (Sunday 14 January 1990)] Digital Optical Computing II - Optical fiber crossbar switch

Kilcoyne, Michael K., Beccue, Stephen M., Brar, Berinder, Robinson, G., Pedrotti, Kenneth D., Haber, William A., Arrathoon, Raymond

Year:

1990

Language:

english

File:

PDF, 376 KB

english, 1990

28

SPIE Proceedings [SPIE SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation - San Diego, CA (Sunday 11 July 1993)] Growth and Characterization of Materials for Infrared Detectors - Normal-incidence quantum-well infrared photodetectors utilizing ellipsoidal valley intersubband transitions in n-type GaSb-AlSb multiquantum wells

Samoska, Lorene A., Brar, Berinder, Kroemer, Herbert, Longshore, Randolph E., Baars, Jan W.

Year:

1993

Language:

english

File:

PDF, 512 KB

english, 1993

29

GaN HEMT-based >1 GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865 MHz Power Conversion Applications

Mehrotra, Vivek, Arias, Andrea, Neft, Charles, Bergman, Joshua, Urteaga, Miguel, Brar, Berinder

Journal:

IEEE Journal of Emerging and Selected Topics in Power Electronics

Year:

2016

Language:

english

File:

PDF, 1.73 MB

english, 2016

30

GaN-based Field-Effect Transistors with Laterally Gated Two-Dimensional Electron Gas

Shinohara, Keisuke, King, Casey, Carter, Andrew D., Regan, Eric J., Arias, Andrea, Bergman, Joshua, Urteaga, Miguel, Brar, Berinder

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 763 KB

english, 2018

31

Development of a 100-W 200-GHz High Bandwidth mm-Wave Amplifier

Field, Mark, Kimura, Takuji, Atkinson, John, Gamzina, Diana, Luhmann, Neville C., Stockwell, Brad, Grant, Thomas J., Griffith, Zachary, Borwick, Robert, Hillman, Christopher, Brar, Berinder, Reed, Tho

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 2.36 MB

english, 2018

32

(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity

Shinohara, Keisuke, King, Casey, Regan, Eric, Gomez, M P, Bergman, Joshua, Carter, Andrew, Arias, Andrea, Urteaga, Miguel, Brar, Berinder, Page, Ryan, Chaudhuri, Reet, Islam, Moudud, Xing, Huili Grace

Journal:

ECS Transactions

Year:

2019

File:

PDF, 1.45 MB

2019